JPH0211792Y2 - - Google Patents
Info
- Publication number
- JPH0211792Y2 JPH0211792Y2 JP5751383U JP5751383U JPH0211792Y2 JP H0211792 Y2 JPH0211792 Y2 JP H0211792Y2 JP 5751383 U JP5751383 U JP 5751383U JP 5751383 U JP5751383 U JP 5751383U JP H0211792 Y2 JPH0211792 Y2 JP H0211792Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plate
- pellet
- main electrode
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims 1
- 239000008188 pellet Substances 0.000 description 20
- 230000003068 static effect Effects 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Die Bonding (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5751383U JPS59164253U (ja) | 1983-04-19 | 1983-04-19 | 半導体装置の電極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5751383U JPS59164253U (ja) | 1983-04-19 | 1983-04-19 | 半導体装置の電極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59164253U JPS59164253U (ja) | 1984-11-02 |
| JPH0211792Y2 true JPH0211792Y2 (en]) | 1990-04-03 |
Family
ID=30187814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5751383U Granted JPS59164253U (ja) | 1983-04-19 | 1983-04-19 | 半導体装置の電極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59164253U (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE55753B1 (en) * | 1983-09-06 | 1991-01-02 | Gen Electric | Power semiconductor device with main current section and emulation current section |
-
1983
- 1983-04-19 JP JP5751383U patent/JPS59164253U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59164253U (ja) | 1984-11-02 |
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